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Abstract Antiferroelectric materials, where the transition between antipolar and polar phase is controlled by external electric fields, offer exceptional energy storage capacity with high efficiencies, giant electrocaloric effect, and superb electromechanical response. PbZrO₃is the first discovered and the archetypal antiferroelectric material. Nonetheless, substantial challenges in processing phase pure PbZrO₃have limited studies of the undoped composition, hindering understanding of the phase transitions in this material or unraveling the controversial origins of a low‐field ferroelectric phase observed in lead zirconate thin films. Leveraging highly oriented PbZrO₃thin films, a room‐temperature ferrielectric phase is observed in the absence of external electric fields, with modulations of amplitude and direction of the spontaneous polarization and large anisotropy for critical electric fields required for phase transition. The ferrielectric state observations are qualitatively consistent with theoretical predictions, and correlate with very high dielectric tunability, and ultrahigh strains (up to 1.1%). This work suggests a need for re‐evaluation of the fundamental science of antiferroelectricity in this archetypal material. 

Abstract Scanning Probe Microscopy (SPM) based techniques probe material properties over microscale regions with nanoscale resolution, ultimately resulting in investigation of mesoscale functionalities. Among SPM techniques, piezoresponse force microscopy (PFM) is a highly effective tool in exploring polarization switching in ferroelectric materials. However, its signal is also sensitive to sample‐dependent electrostatic and chemo‐electromechanical changes. Literature reports have often concentrated on the evaluation of theOff‐fieldpiezoresponse, compared toOn‐fieldpiezoresponse, based on the latter's increased sensitivity to non‐ferroelectric contributions. Using machine learning approaches incorporatingboth Off‐andOn‐fieldpiezoresponse response as well asOff‐fieldresonance frequency to maximize information, switching piezoresponse in a defect‐rich Pb(Zr,Ti)O₃thin film is investigated. As expected, one major contributor to the piezoresponse is mostly ferroelectric, coupled with electrostatic phenomena duringOn‐fieldmeasurements. A second component is electrostatic in nature, while a third component is likely due to a superposition of multiple non‐ferroelectric processes. The proposed approach will enable deeper understanding of switching phenomena in weakly ferroelectric samples and materials with large chemo‐electromechanical response.